Publikationen

Probst, T., Schall, F., Heuft, S., Schindler, J., Lindner, L., Mägdefessel, S., Quay, R., Reineck, P., Zaitsev, A. M., Ohshima, T., Weidemüller, M., & Jeske, J. (2026). Characterizing the nitrogen-vacancy center singlet transition and its phonon sideband for absorption-based room-temperature magnetometry. arXiv. https://doi.org/10.48550/arxiv.2608.02060

Safari Mugisho, M., Friesicke, C., Brückner, P., & Quay, R. (2026). A 26-40 GHz GaN Doherty Power Amplifier with >20% PAE at 6-dB Back-Off Supporting Multi-Band 5G mm-Wave Applications. 2026 IEEE MTT-S Radio Frequency Technology and Techniques Symposium (IMS RFTT), 581–584. https://doi.org/10.1109/imsrftt43070.2026.11602545

Moulin, M., Leuther, A., Albahrani, S. A., Heinz, F., Kuliabin, K., Chartier, S., Sebastian, A., Kunnath, A. A., Lozar, R., & Quay, R. (2026). 4-Pole 20-nm InGaAs HEMT-on-Silicon Technology for Enhanced Breakdown Voltage Achieving Fmax > 650 GHz. 2026 IEEE MTT-S Radio Frequency Technology and Techniques Symposium (IMS RFTT), 541–544. https://doi.org/10.1109/imsrftt43070.2026.11602537

Maurette Blasini, C. E., Chartier, S., Wagner, S., Brückner, P., & Quay, R. (2026). Distributed Resistive Up-Converter GaN HEMT MMIC with High LO Suppression for Wideband Applications Up to D-Band. 2026 IEEE MTT-S Radio Frequency Technology and Techniques Symposium (IMS RFTT), 553–556. https://doi.org/10.1109/imsrftt43070.2026.11602482

Umbach, P., Thome, F., Leuther, A., & Quay, R. (2026). Double Balanced Parametric and Resistive Millimeter-Wave Mixers with more than 100 GHz RF-Bandwidth. 2026 IEEE MTT-S Radio Frequency Technology and Techniques Symposium (IMS RFTT), 549–552. https://doi.org/10.1109/imsrftt43070.2026.11602508

Streicher, I. M., Muriqi, A., Mullins, R., Straňák, P., Prescher, M., Kapitein, M., Kirste, L., Quay, R., Nolan, M., & Leone, S. (2026). Role of scandium precursor decomposition in MOCVD of AlScN and predictions for AlYN. Materials Advances, 7(16), 8439–8448. https://doi.org/10.1039/d6ma00563b

Geist, H., Ambacher, O., Brundiers, K., Cojocaru-Mirédin, O., Eberl, C., Gumbsch, P., Hansen, E. G., Neuhaus, H., Quay, R., Ramey, A., Reiterer, A., Stolz, A., Weidlich, A., Wiek, A., & Balle, F. (2026). Circularity Engineering: A Scientific White Paper. Journal of Circular Economy, 4(2). https://doi.org/10.55845/joce-2026-42386

Agtas, U., Gur, H. C., Duarte, T., Soydal, O., Marcantoni, F., So, B., Kirste, L., Straňák, P., Prescher, M., Leone, S., Quay, R., & Matioli, E. (2026). Multi-Channel AlScN/GaN RF HEMTs Grown by Metal-Organic Chemical Vapor Deposition. IEEE Electron Device Letters, 1–1. https://doi.org/10.1109/led.2026.3707933

Weber, B., Dammann, M., Brückner, P., Straňák, P., Kirste, L., Czap, H., Baeumler, M., Konstanzer, H., Neininger, P., Merkert, P., & Quay, R. (2026). Investigation of the environmental influence on C(V) characteristics of gallium nitride metal–insulator–semiconductor high-electron-mobility transistors. Journal of Applied Physics, 139(24), 245703. https://doi.org/10.1063/5.0325135

Reiner, R., Benkhelifa, F., Basler, M., Moench, S., Grieshaber, D., Waltereit, P., Müller, S., & Quay, R. (2026). Back-gated GaN-on-Si HEMTs in multistage cascodes. IEEE Transactions on Electron Devices, 73(7), 4051–4057. https://doi.org/10.1109/ted.2026.3696238

Duarte, T., Straňák, P., Kirste, L., Prescher, M., Benkhelifa, F., So, B., Leone, S., Merkert, P., & Quay, R. (2026). Mn-doping with reduced carry-over effect in semi-insulating GaN grown by MOCVD. Applied Physics Letters, 128(26), 262102. https://doi.org/10.1063/5.0336269

Leone, S., Duarte, T., Menner, H., Richter, J., Kirste, L., Maegdefessel, S., Hoffmann, F., So, B., & Quay, R. (2026). Chemical vapor deposition of nitrides by carbon‐free brominated precursors. Physica Status Solidi, 223(4), e202600005. https://doi.org/10.1002/pssa.202600005

Weber, B., Dammann, M., Albahrani, S. A., Kunnath, A., Brückner, P., Czap, H., Baeumler, M., Konstanzer, H., Neininger, P., & Quay, R. (2026). Effect of humidity and electric field on reliability of GaN MISHEMT test structures. 2026 IEEE International Reliability Physics Symposium (IRPS), pp. 1–6. https://doi.org/10.1109/irps61424.2026.11499312

Zieciak, T., Neininger, P., Friesicke, C., Brückner, P., & Quay, R. (2026). A D-band GaN power amplifier with 28-dBm P sat , a power density of 0.2 W/mm 2 , and loss-optimized matching networks. IEEE Microwave and Wireless Technology Letters, 36(6), 1–4. https://doi.org/10.1109/lmwt.2026.3678195

Seeholzer, T., Sánchez, D., & Quay, R. (2026). Environmental hotspots in semiconductor-based diabetes care: green ICs and circular economy approaches. REACT 2025, 10. https://doi.org/10.3390/engproc2026127010

Maurette Blasini, C. E., Albahrani, S. A., Schwantuschke, D., Brückner, P., Wagner, S., & Quay, R. (2026). Design and ASM-based modeling of wideband distributed downconverter GaN HEMT MMICs up to D-band. IEEE Transactions on Microwave Theory and Techniques, 74(6), 5097–5106. https://doi.org/10.1109/tmtt.2026.3672011

Jeske, J., Schall, F., Rottstaedt, Y., Lindner, L., Schindler, J., Probst, T., Rattunde, M., Quay, R., Zaitsev, A., Ohshima, T., Bek, R., Reineck, P., Gibson, B. C., & Greentree, A. D. (2026b). Laser threshold magnetometry with nitrogen-vacancy centres in diamond. Quantum Sensing, Imaging, and Precision Metrology IV, 139200O. https://doi.org/10.1117/12.3079855

Jeske, J., Schall, F., Rottstaedt, Y., Lindner, L., Schindler, J., Probst, T., Rattunde, M., Quay, R., Zaitsev, A., Ohshima, T., Bek, R., Reineck, P., Gibson, B. C., & Greentree, A. D. (2026a). Combining MECSEL with intra-cavity quantum emitters/absorbers for laser-enhanced sensing. Vertical-Cavity Surface-Emitting Lasers XXX : OPTO, 1391105. https://doi.org/10.1117/12.3079845

Umbach, P., Thome, F., Leuther, A., & Quay, R. (2026). LO leakage suppression in resistive zero-IF IQ mixers beyond 100 GHz. IEEE Transactions on Microwave Theory and Techniques, 74(5), 4224–4234. https://doi.org/10.1109/tmtt.2026.3664202

Sebastian, A., Kuliabin, K., Moulin, M., Chartier, S., Heinz, F., Schwantuschke, D., Leuther, A., & Quay, R. (2026). Demonstration of e/d-mode logic circuits in a four-pole 20-nm InGaAs HEMT-on-silicon technology using back-gate biasing. IEEE Electron Device Letters, 47(5), 881–884. https://doi.org/10.1109/led.2026.3668409