PostDoc

In the upcoming months a new research group will take over the Sensors Laboratory to be headed by Dr. Alwin Daus who will be an incoming Tenure-Track Professor at IMTEK, University of Freiburg.

Until now, Dr. Alwin Daus has been leading his own research group at RWTH Aachen University, specialized in two-dimensional (2D) material growth and flexible electronic devices. Dr. Daus’ research directions span a wide range including (flexible) sensors, transistors, memory, and solar cells.

He is mainly interested in research on emerging semiconductor materials, such as sputtered oxide semiconductors, chalcogenides and 2D materials, that can be integrated into devices at low process temperatures. This makes them compatible with a variety of substrates leading to exciting potential applications in Internet-of-Things, bendable displays, electronic skin, biomedical diagnostics, wearables, and environmental sensors. Furthermore, he is active in the research of devices for brain-inspired (neuromorphic) computing which could provide an energy efficient alternative to conventional hardware ideally suited for edge sensor systems or brain-machine interfaces.

If these topics have sparked your interest, you now have the opportunity to join Dr. Daus’ group as a postdoc where you can help shaping a new research direction at IMTEK, University of Freiburg.

In this postdoc position you will be able to gain valuable skills for a scientific career by working on the following tasks:

• Cutting-edge research related to the topics mentioned above
• Actively taking part in setting up the lab including decisions on purchase of new equipment
• Providing guidance to doctoral, master and bachelor students and working in a diverse and international team
• Gaining experience in teaching by assisting in lectures and/or exercises
• Gaining experience in proposal writing
• Engaging in international collaborations, building a greater network at international conferences, and publishing high quality research papers.

Your qualifications ideally include the following aspects:

• Hold a PhD (or equivalent) degree from a reputable institution
• Strong academic track record and aptitude towards explorative, experimental work
• Published works in reputable journals or conferences
• Experience in cleanroom device fabrication, semiconductor material synthesis and/or structural, chemical, and electrical device/material characterization
• Prior work on sensors and/or flexible electronic devices is a plus
• Excellent communication skills and fluent in written and spoken English, knowledge of the German language is a plus
• Strong degree of scientific curiosity, independence, diligence and creativity are highly desirable
• Embrace open and collaborative working culture and being an excellent team player.

If this description picked your interest, please contact Dr. Alwin Daus via email.

Publications by Dr. Daus relating to planned activities of his group:

[1] A. Daus et al., “High-performance flexible nanoscale transistors based on transition metal dichalcogenides”, Nature Electronics 4, 495-501, (2021).[2] A. Daus et al., “Fast-response flexible temperature sensors with atomically thin molybdenum disulfide”, Nano Letters 22, 6135-6140, (2022).[3] S. Knobelspies et al., “Flexible a‐IGZO phototransistor for instantaneous and cumulative UV‐exposure monitoring for skin health”, Advanced Electronic Materials, 2, 1600273, (2016).[4] I.M. Datye et al., “Strain-enhanced mobility of monolayer MoS2”, Nano Letters 22, 8052-8059, (2022).[5] S. Knobelspies et al., “Photo-induced room-temperature gas sensing with a-IGZO based thin-film transistors fabricated on flexible plastic foil”, Sensors, 18, 358, (2018).[6] A. Daus et al., “Flexible CMOS electronics based on p-type Ge2Sb2Te5 and n-type InGaZnO4 semiconductors”, IEEE International Electron Devices Meeting (IEDM), 8.1.1-8.1.4, (2017).[7] A.I. Khan*, A. Daus*, et al., “Ultralow–switching current density multilevel phase-change memory on a flexible substrate”, Science 373, 1243-1247, (2021).[8] A. Daus et al., “Ferroelectric‐like charge trapping thin‐film transistors and their evaluation as memories and synaptic devices”, Advanced Electronic Materials, 3, 1700309, (2017).[9] L. Völkel et al., “Resistive switching and current conduction mechanisms in hexagonal boron nitride threshold memristors with nickel electrodes”, Advanced Functional Material, (2023).[10] K. Nassiri Nazif*, A. Daus*, et al., “High-specific-power flexible transition metal dichalcogenide solar cells”, Nature Communications 12, 7034, (2021).[11] S. Wahid et al., “First demonstration of dual-gated indium tin oxide transistors with record drive current ~2.3 mA/μm at L ≈ 60 nm and VDS = 1 V”, IEEE International Electron Devices Meeting, 12.5.1-12.5.4, (2022).