Selected Publications
- Svihra, et. al: Exploring the design and measurements of next-generation 4H-SiC LGADs, 10.1016/j.nima.2025.170742
- Svihra, et. al: Laboratory and beam-test performance study of a 55 µm pitch iLGAD sensor bonded to a Timepix3 readout chip, 10.1088/1748-0221/19/11/C11006
- Ianzano, Svihra, Flament et al: Fast camera spatial characterization of photonic polarization entanglement, 10.1038/s41598-020-62020-z
- Nomerotski, et.al: Intensified Tpx3Cam, a fast data-driven optical camera with nanosecond timing resolution for single photon detection in quantum applications, 10.1088/1748-0221/18/01/C01023
- Schmidt, et al: Pixel detector hybridisation with anisotropic conductive films, 10.1088/1748-0221/18/01/C01040
FRIAS Project
Development and Optimization of Advanced Semiconductor Sensors for High-Energy Physics and Beyond
Modern particle physics experiments rely on highly precise detectors to measure and time the trajectories of particles produced in high-energy collisions. This project focuses on developing advanced semiconductor sensors capable of operating with extreme precision and durability under intense radiation.
The research explores Low-Gain Avalanche Detectors (LGADs), which combine fast timing with fine spatial resolution, and investigates ways to enhance their performance through simulation and testing. A key direction may also examine other sensors, such as silicon carbide (SiC), as a novel material for LGADs, offering improved radiation hardness and stability for next-generation detectors.
The results will contribute to the design of future high-precision tracking systems at particle colliders and extend to applications beyond fundamental physics — including medical imaging, ultrafast light detection, and industrial monitoring. By integrating modeling, fabrication, and characterization, the project advances semiconductor detector technology at the interface of science and engineering.