Publikationen

Umbach, P., Thome, F., Leuther, A., & Quay, R. (2025). Resistive D-Band Mixers with Monolithic Integrated Broadband IF Balun and LO Amplifier. 2025 20th European Microwave Integrated Circuits Conference (EuMIC), 57–60. https://doi.org/10.23919/eumic65284.2025.11234390

Safari Mugisho, M., Friesicke, C., Wagner, S., & Quay, R. (2025). A V-Band (61-72 GHz) GaN HEMT High-Power Amplifier. 2025 20th European Microwave Integrated Circuits Conference (EuMIC), 174–177. https://doi.org/10.23919/eumic65284.2025.11234498

Zieciak, T., Neininger, P., Friesicke, C., Brückner, P., & Quay, R. (2025). A 200 mW, High-Gain Gan-Based D-Band Power Amplifier for 6G Communication Applications. 2025 20th European Microwave Integrated Circuits Conference (EuMIC), 93–96. https://doi.org/10.23919/eumic65284.2025.11234457

Seeholzer, T., Petre, A.-R., Stuart-Wijesuriya, S., & Quay, R. (2025). Advancing Wound Management with Smart and Sustainable Electronics for a Human-Environment-Centric Society: A Life Cycle Assessment Approach. 2025 32nd IEEE International Conference on Electronics, Circuits and Systems (ICECS), 1–4. https://doi.org/10.1109/icecs66544.2025.11270669

Duarte, T., Streicher, I. M., Straňák, P., Kirste, L., Prescher, M., Wolff, N., Beuer, S., Kienle, L., Quay, R., & Leone, S. (2025). AlScN/GaN Multichannel Heterostructures Grown by Metal–Organic Chemical Vapor Deposition. Advanced Materials Interfaces. https://doi.org/10.1002/admi.202500726

Reiner, R., Waltereit, P., Basler, M., Grieshaber, D., Moench, S., & Quay, R. (2025). Self-Compatible Transistors in GaN-on-Si Technology for High-Voltage Cascodes. IEEE Transactions on Electron Devices, 1–8. https://doi.org/10.1109/ted.2025.3612927

Zieciak, T., Neininger, P., Friesicke, C., Brückner, P., & Quay, R. (2025). A D-Band Front-End T/R MMIC in a $70-\text{nm}$ GaN HEMT Technology. 2025 IEEE/MTT-S International Microwave Symposium – IMS 2025, 585–587. https://doi.org/10.1109/ims40360.2025.11103926

Quay, R., Yousuf, D., & Seeholzer, T. (2025). Im Dreieck der Nachhaltigkeit. Physik Journal, 24(3), 35–41.

Gashi, B., John, L., Kuliabin, K., Leuther, A., & Quay, R. (2025). 300GHz 8×1 active phased array MMIC with On-Chip power amplifiers, vector modulators, and antennas. Proceedings of the 2025 IEEE/MTT-S International Microwave Symposium (IMS)., 815–818.

Zieciak, T., Neininger, P., Friesicke, C., Brückner, P., & Quay, R. (2025). A D-Band Front-End T/R MMIC in a 70-nm GaN HEMT Technology. Proceedings of the 2025 IEEE/MTT-S International Microwave Symposium (IMS), 585–588.

Safari Mugisho, M., Friesicke, C., Ayad, M., Maier, T., & Quay, R. (2025). A Ka-Band GaN Doherty Power Amplifier with High Efficiency Over a Fractional Bandwidth of 20.4%. Proceedings of the 2025 IEEE/MTT-S International Microwave Symposium (IMS), 651–654.

Umbach, P., Riedmann, N., Thome, F., Vossiek, M., & Quay, R. (2025). Integrated solution for linear and non-linear single-touchdown on-wafer characterization of D-band mixers. Proceedings of the 2025 IEEE/MTT-S International Microwave Symposium (IMS), 903–906. https://doi.org/10.1109/IMS40360.2025.11103941

Umbach, P., Thome, F., Leuther, A., & Quay, R. (2025). Monolithic implementation and performance comparison of three single balanced architectures for D-band HEMT mixers. In Proceedings of the 2025 IEEE/MTT-S International Microwave Symposium (IMS) (pp. 443–446). IEEE.

Nomoto, K., Streicher, I. M., Nguyen, T.-S., Savant, C., Ramesh, M., Ma, S., Encomendero, J., Kirste, L., Straňák, P., Quay, R., Leone, S., Xing, H. G., & Jena, D. (2025). MOCVD AlYN/GaN HEMTs with 66.5 mV/decade sub-threshold swing and 109 on/off ratio. Applied Physics Letters, 126(22), 223509. https://doi.org/10.1063/5.0257333

Sinnwell, M., Dammann, M., Driad, R., Mikulla, M., Müller, S., & Quay, R. (2025). Normally-off, quasi-vertical GaN FinFETs on sapphire substrates with fin widths structured by i-line lithography in the 100 nm range. IEEE Electron Device Letters, 1–1. https://doi.org/10.1109/led.2025.3571986

Pandya, D., Maurette Blasini, C. E., Kuliabin, K., Wagner, S., & Quay, R. (2025). GaN-Based Single-Ended Resistive Mixer for V-Band (50-70 GHz) Applications. 2025 16th German Microwave Conference (GeMiC), 447–450. https://doi.org/10.23919/gemic64734.2025.10979190

Pandya, D., Schuberth, C., Ghosh, S., Koh, M., Brech, H., & Quay, R. (2025). Design of a 3.5 GHz symmetric Doherty PA in an 8-inch GaN on silicon MMIC technology for base station applications. 2025 International Workshop on Integrated Nonlinear Microwave and Millimetre-Wave Circuits (INMMIC), 1–4. https://doi.org/10.1109/inmmic64198.2025.10975382

Rottstaedt, Y., Lindner, L., Schall, F., Hahl, F. A., Luo, T., Reiter, F., Ohshima, T., Zaitsev, A. M., Bek, R., Rattunde, M., Jeske, J., & Quay, R. (2025). Two-media laser threshold magnetometry: a magnetic-field-dependent laser threshold. arXiv. https://doi.org/10.48550/arxiv.2504.08466

Schall, F., Hahl, F. A., Lindner, L., Vidal, X., Luo, T., Zaitsev, A. M., Ohshima, T., Jeske, J., & Quay, R. (2025). High-contrast absorption magnetometry in the visible to near-infrared range with nitrogen-vacancy ensembles. Optics Express, 33(5), 10899. https://doi.org/10.1364/oe.550716

Lindner, L., Rottstaedt, Y., Schall, F., Hahl, F. A., Luo, T., Dogan, C., Antonio, G. N., Vidal, X., Sacher, J., Zaitsev, A. M., Ohshima, T., Capelli, M., Gibson, B. C., Greentree, A. D., Rattunde, M., Jeske, J., & Quay, R. (2025). Laser threshold magnetometry with a combined laser diode, nitrogen-vacancy center cavity. Quantum Sensing, Imaging, and Precision Metrology III, 1339209. https://doi.org/10.1117/12.3042797