Publikationen
Fritz-Hüttinger-Professur für Energieeffiziente Hochfrequenzelektronik
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Umbach, P., Thome, F., Leuther, A., & Quay, R. (2025). Resistive D-Band Mixers with Monolithic Integrated Broadband IF Balun and LO Amplifier. 2025 20th European Microwave Integrated Circuits Conference (EuMIC), 57–60. https://doi.org/10.23919/eumic65284.2025.11234390
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Safari Mugisho, M., Friesicke, C., Wagner, S., & Quay, R. (2025). A V-Band (61-72 GHz) GaN HEMT High-Power Amplifier. 2025 20th European Microwave Integrated Circuits Conference (EuMIC), 174–177. https://doi.org/10.23919/eumic65284.2025.11234498
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Zieciak, T., Neininger, P., Friesicke, C., Brückner, P., & Quay, R. (2025). A 200 mW, High-Gain Gan-Based D-Band Power Amplifier for 6G Communication Applications. 2025 20th European Microwave Integrated Circuits Conference (EuMIC), 93–96. https://doi.org/10.23919/eumic65284.2025.11234457
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Seeholzer, T., Petre, A.-R., Stuart-Wijesuriya, S., & Quay, R. (2025). Advancing Wound Management with Smart and Sustainable Electronics for a Human-Environment-Centric Society: A Life Cycle Assessment Approach. 2025 32nd IEEE International Conference on Electronics, Circuits and Systems (ICECS), 1–4. https://doi.org/10.1109/icecs66544.2025.11270669
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Duarte, T., Streicher, I. M., Straňák, P., Kirste, L., Prescher, M., Wolff, N., Beuer, S., Kienle, L., Quay, R., & Leone, S. (2025). AlScN/GaN Multichannel Heterostructures Grown by Metal–Organic Chemical Vapor Deposition. Advanced Materials Interfaces. https://doi.org/10.1002/admi.202500726
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Reiner, R., Waltereit, P., Basler, M., Grieshaber, D., Moench, S., & Quay, R. (2025). Self-Compatible Transistors in GaN-on-Si Technology for High-Voltage Cascodes. IEEE Transactions on Electron Devices, 1–8. https://doi.org/10.1109/ted.2025.3612927
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Zieciak, T., Neininger, P., Friesicke, C., Brückner, P., & Quay, R. (2025). A D-Band Front-End T/R MMIC in a $70-\text{nm}$ GaN HEMT Technology. 2025 IEEE/MTT-S International Microwave Symposium – IMS 2025, 585–587. https://doi.org/10.1109/ims40360.2025.11103926
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Quay, R., Yousuf, D., & Seeholzer, T. (2025). Im Dreieck der Nachhaltigkeit. Physik Journal, 24(3), 35–41.
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Gashi, B., John, L., Kuliabin, K., Leuther, A., & Quay, R. (2025). 300GHz 8×1 active phased array MMIC with On-Chip power amplifiers, vector modulators, and antennas. Proceedings of the 2025 IEEE/MTT-S International Microwave Symposium (IMS)., 815–818.
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Zieciak, T., Neininger, P., Friesicke, C., Brückner, P., & Quay, R. (2025). A D-Band Front-End T/R MMIC in a 70-nm GaN HEMT Technology. Proceedings of the 2025 IEEE/MTT-S International Microwave Symposium (IMS), 585–588.
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Safari Mugisho, M., Friesicke, C., Ayad, M., Maier, T., & Quay, R. (2025). A Ka-Band GaN Doherty Power Amplifier with High Efficiency Over a Fractional Bandwidth of 20.4%. Proceedings of the 2025 IEEE/MTT-S International Microwave Symposium (IMS), 651–654.
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Umbach, P., Riedmann, N., Thome, F., Vossiek, M., & Quay, R. (2025). Integrated solution for linear and non-linear single-touchdown on-wafer characterization of D-band mixers. Proceedings of the 2025 IEEE/MTT-S International Microwave Symposium (IMS), 903–906. https://doi.org/10.1109/IMS40360.2025.11103941
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Umbach, P., Thome, F., Leuther, A., & Quay, R. (2025). Monolithic implementation and performance comparison of three single balanced architectures for D-band HEMT mixers. In Proceedings of the 2025 IEEE/MTT-S International Microwave Symposium (IMS) (pp. 443–446). IEEE.
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Nomoto, K., Streicher, I. M., Nguyen, T.-S., Savant, C., Ramesh, M., Ma, S., Encomendero, J., Kirste, L., Straňák, P., Quay, R., Leone, S., Xing, H. G., & Jena, D. (2025). MOCVD AlYN/GaN HEMTs with 66.5 mV/decade sub-threshold swing and 109 on/off ratio. Applied Physics Letters, 126(22), 223509. https://doi.org/10.1063/5.0257333
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Sinnwell, M., Dammann, M., Driad, R., Mikulla, M., Müller, S., & Quay, R. (2025). Normally-off, quasi-vertical GaN FinFETs on sapphire substrates with fin widths structured by i-line lithography in the 100 nm range. IEEE Electron Device Letters, 1–1. https://doi.org/10.1109/led.2025.3571986
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Pandya, D., Maurette Blasini, C. E., Kuliabin, K., Wagner, S., & Quay, R. (2025). GaN-Based Single-Ended Resistive Mixer for V-Band (50-70 GHz) Applications. 2025 16th German Microwave Conference (GeMiC), 447–450. https://doi.org/10.23919/gemic64734.2025.10979190
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Pandya, D., Schuberth, C., Ghosh, S., Koh, M., Brech, H., & Quay, R. (2025). Design of a 3.5 GHz symmetric Doherty PA in an 8-inch GaN on silicon MMIC technology for base station applications. 2025 International Workshop on Integrated Nonlinear Microwave and Millimetre-Wave Circuits (INMMIC), 1–4. https://doi.org/10.1109/inmmic64198.2025.10975382
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Rottstaedt, Y., Lindner, L., Schall, F., Hahl, F. A., Luo, T., Reiter, F., Ohshima, T., Zaitsev, A. M., Bek, R., Rattunde, M., Jeske, J., & Quay, R. (2025). Two-media laser threshold magnetometry: a magnetic-field-dependent laser threshold. arXiv. https://doi.org/10.48550/arxiv.2504.08466
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Schall, F., Hahl, F. A., Lindner, L., Vidal, X., Luo, T., Zaitsev, A. M., Ohshima, T., Jeske, J., & Quay, R. (2025). High-contrast absorption magnetometry in the visible to near-infrared range with nitrogen-vacancy ensembles. Optics Express, 33(5), 10899. https://doi.org/10.1364/oe.550716
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Lindner, L., Rottstaedt, Y., Schall, F., Hahl, F. A., Luo, T., Dogan, C., Antonio, G. N., Vidal, X., Sacher, J., Zaitsev, A. M., Ohshima, T., Capelli, M., Gibson, B. C., Greentree, A. D., Rattunde, M., Jeske, J., & Quay, R. (2025). Laser threshold magnetometry with a combined laser diode, nitrogen-vacancy center cavity. Quantum Sensing, Imaging, and Precision Metrology III, 1339209. https://doi.org/10.1117/12.3042797