Publikationen

Döring, P., Krause, S., & Quay, R. (2026). On the Impact of the Barrier Design, Carrier Density, and Temperature on High-Field Transport Properties in GaN-Based Heterostructures. IEEE Transactions on Electron Devices, 73(2), 761–765. https://doi.org/10.1109/ted.2025.3646192

Moench, S., Basler, M., Haarer, J., Reiner, R., & Quay, R. (2026). Continuous Current Sensing GaN Half-Bridge ICs. IEEE Open Journal of Power Electronics, 1–11. https://doi.org/10.1109/ojpel.2026.3658403

Schillo, N., Sturm, A., & Quay, R. (2026). Block Encoding Linear Combinations of Pauli Strings Using the Stabilizer Formalism. arXiv. https://doi.org/10.48550/arxiv.2601.05740

Umbach, P., Thome, F., Leuther, A., & Quay, R. (2025). Resistive D-Band Mixers with Monolithic Integrated Broadband IF Balun and LO Amplifier. 2025 20th European Microwave Integrated Circuits Conference (EuMIC), 57–60. https://doi.org/10.23919/eumic65284.2025.11234390

Safari Mugisho, M., Friesicke, C., Wagner, S., & Quay, R. (2025). A V-Band (61-72 GHz) GaN HEMT High-Power Amplifier. 2025 20th European Microwave Integrated Circuits Conference (EuMIC), 174–177. https://doi.org/10.23919/eumic65284.2025.11234498

Zieciak, T., Neininger, P., Friesicke, C., Brückner, P., & Quay, R. (2025). A 200 mW, High-Gain Gan-Based D-Band Power Amplifier for 6G Communication Applications. 2025 20th European Microwave Integrated Circuits Conference (EuMIC), 93–96. https://doi.org/10.23919/eumic65284.2025.11234457

Seeholzer, T., Petre, A.-R., Stuart-Wijesuriya, S., & Quay, R. (2025). Advancing Wound Management with Smart and Sustainable Electronics for a Human-Environment-Centric Society: A Life Cycle Assessment Approach. 2025 32nd IEEE International Conference on Electronics, Circuits and Systems (ICECS), 1–4. https://doi.org/10.1109/icecs66544.2025.11270669

Duarte, T., Streicher, I. M., Straňák, P., Kirste, L., Prescher, M., Wolff, N., Beuer, S., Kienle, L., Quay, R., & Leone, S. (2025). AlScN/GaN multichannel heterostructures grown by metal-organic chemical vapor deposition. Advanced Materials Interfaces, 12(23), e00726. https://doi.org/10.1002/admi.202500726

Reiner, R., Basler, M., Moench, S., Grieshaber, D., Döring, P., Dammann, M., Waltereit, P., & Quay, R. (2025). Thermal characterization of GaN Power HEMTs by transient I – V curves, infrared microscopy, and thermal simulation. IEEE Transactions on Electron Devices, 72(12), 6546–6553. https://doi.org/10.1109/ted.2025.3618217

Reiner, R., Waltereit, P., Basler, M., Grieshaber, D., Moench, S., & Quay, R. (2025). Self-Compatible Transistors in GaN-on-Si Technology for High-Voltage Cascodes. IEEE Transactions on Electron Devices, 1–8. https://doi.org/10.1109/ted.2025.3612927

Zieciak, T., Neininger, P., Friesicke, C., Brückner, P., & Quay, R. (2025). A D-Band Front-End T/R MMIC in a $70-\text{nm}$ GaN HEMT Technology. 2025 IEEE/MTT-S International Microwave Symposium – IMS 2025, 585–587. https://doi.org/10.1109/ims40360.2025.11103926

Quay, R., Yousuf, D., & Seeholzer, T. (2025). Im Dreieck der Nachhaltigkeit. Physik Journal, 24(3), 35–41.

Gashi, B., John, L., Kuliabin, K., Leuther, A., & Quay, R. (2025). 300GHz 8×1 active phased array MMIC with On-Chip power amplifiers, vector modulators, and antennas. Proceedings of the 2025 IEEE/MTT-S International Microwave Symposium (IMS)., 815–818.

Zieciak, T., Neininger, P., Friesicke, C., Brückner, P., & Quay, R. (2025). A D-Band Front-End T/R MMIC in a 70-nm GaN HEMT Technology. Proceedings of the 2025 IEEE/MTT-S International Microwave Symposium (IMS), 585–588.

Safari Mugisho, M., Friesicke, C., Ayad, M., Maier, T., & Quay, R. (2025). A Ka-Band GaN Doherty Power Amplifier with High Efficiency Over a Fractional Bandwidth of 20.4%. Proceedings of the 2025 IEEE/MTT-S International Microwave Symposium (IMS), 651–654.

Umbach, P., Riedmann, N., Thome, F., Vossiek, M., & Quay, R. (2025). Integrated solution for linear and non-linear single-touchdown on-wafer characterization of D-band mixers. Proceedings of the 2025 IEEE/MTT-S International Microwave Symposium (IMS), 903–906. https://doi.org/10.1109/IMS40360.2025.11103941

Umbach, P., Thome, F., Leuther, A., & Quay, R. (2025). Monolithic implementation and performance comparison of three single balanced architectures for D-band HEMT mixers. Proceedings of the 2025 IEEE/MTT-S International Microwave Symposium (IMS), 443–446. https://doi.org/10.1109/IMS40360.2025.11103860

Nomoto, K., Streicher, I. M., Nguyen, T.-S., Savant, C., Ramesh, M., Ma, S., Encomendero, J., Kirste, L., Straňák, P., Quay, R., Leone, S., Xing, H. G., & Jena, D. (2025). MOCVD AlYN/GaN HEMTs with 66.5 mV/decade sub-threshold swing and 109 on/off ratio. Applied Physics Letters, 126(22), 223509. https://doi.org/10.1063/5.0257333

Sinnwell, M., Dammann, M., Driad, R., Mikulla, M., Müller, S., & Quay, R. (2025). Normally-off, quasi-vertical GaN FinFETs on sapphire substrates with fin widths structured by i-line lithography in the 100 nm range. IEEE Electron Device Letters, 1–1. https://doi.org/10.1109/led.2025.3571986

Pandya, D., Maurette Blasini, C. E., Kuliabin, K., Wagner, S., & Quay, R. (2025). GaN-Based Single-Ended Resistive Mixer for V-Band (50-70 GHz) Applications. 2025 16th German Microwave Conference (GeMiC), 447–450. https://doi.org/10.23919/gemic64734.2025.10979190